Reliability of high-K gate dielectric layers
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United States of America Patent
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Mar 12, 2013
Grant Date -
Nov 15, 2012
app pub date -
Mar 19, 2007
filing date -
Mar 19, 2007
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Abstract
A method for improving the reliability of a high-k gate dielectric layer comprises incorporating a noble metal into a transistor gate stack that contains the high-k gate dielectric layer and annealing the transistor gate stack in a molecular hydrogen or deuterium containing atmosphere. The annealing process drives at least a portion of the molecular hydrogen or deuterium toward the high-k gate dielectric layer. When the molecular hydrogen or deuterium contacts the noble metal, it is converted into atomic hydrogen or deuterium that is able to treat the high-k gate dielectric layer and improve its reliability.
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