Methods of manufacturing three-dimensional semiconductor devices and related devices
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United States of America Patent
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Mar 12, 2013
Grant Date -
Jun 23, 2011
app pub date -
Dec 8, 2010
filing date -
Dec 18, 2009
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Abstract
A three-dimensional semiconductor device may include a substrate including wiring and contact regions and a thin film structure on the wiring and contact regions of the substrate. The thin-film structure may include a plurality of alternating wiring layers and inter-layer insulating layers defining a terraced structure in the contact region so that each of the wiring layers includes a contact surface in the contact region that extends beyond others of the wiring layers more distant from the substrate. A plurality of contact structures may extend in a direction perpendicular to a surface of the substrate with each of the contact structures being electrically connected to a contact surface of a respective one of the wiring layers. Related methods are also discussed.
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