Single mask adder phase change memory element
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United States of America Patent
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Mar 12, 2013
Grant Date -
May 26, 2011
app pub date -
Jan 11, 2011
filing date -
Nov 25, 2009
priority date (Note) -
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Abstract
A method of fabricating a phase change memory element within a semiconductor structure and a semiconductor structure having the same that includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region formed within a dielectric layer at a same layer within the semiconductor structure, depositing a conformal film within the opening and recessing the conformal film to expose the upper surface of the bottom electrode, depositing phase change material within the opening, recessing the phase change material within the opening, and forming a top electrode on the recessed phase change material.
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