Semiconductor memory device and method of fabricating the same
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United States of America Patent
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Sep 3, 2013
Grant Date -
Mar 15, 2012
app pub date -
Nov 21, 2011
filing date -
Nov 21, 2011
priority date (Note) -
Withdrawn
status (Latency Note)
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Abstract
A semiconductor memory includes a memory cell array area provided with first and second memory cells and having a first active area and a first element isolation area constituting a line & space structure, and having a floating gate electrode and a control gate electrode in the first active area, a word line contact area adjacent to the memory cell array area and having a second active area, first and second word lines with a metal silicide structure, functioning respectively as the control gate electrodes of the first and second memory cells and arranged to straddle the memory cell array area and the word line contact area. A dummy gate electrode is arranged just below the first and second word lines in the second active area.
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