Methods of fabricating photomasks for improving damascene wire uniformity without reducing performance
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United States of America Patent
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Mar 19, 2013
Grant Date -
May 3, 2012
app pub date -
Jan 10, 2012
filing date -
Apr 8, 2009
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Abstract
A method of improving damascene wire uniformity without reducing performance. The method includes simultaneously forming a multiplicity of damascene wires and a multiplicity of metal dummy shapes in a dielectric layer of a wiring level of an integrated circuit chip, the metal dummy shapes being dispersed between damascene wires of the multiplicity of damascene wires; and removing or modifying those metal dummy shapes of the multiplicity of metal dummy shapes within exclusion regions around selected damascene wires of the multiplicity of damascene wires. Also a method of fabricating a photomask and a photomask for use in improving damascene wire uniformity without reducing performance.
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