Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 26, 2013
Grant Date -
N/A
app pub date -
Mar 4, 2011
filing date -
Mar 4, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides methods for forming a doped Group IBIIIAVIA absorber layer for a solar cell. The method includes forming precursor layers that include a dopant rich layer and then annealing the precursor layers. The annealing process results in dopants diffusing through the layers to an exterior surface. The annealing process is periodically halted to remove dopants from the exposed surface.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully