Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers

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United States of America Patent

PATENT NO 8404512
SERIAL NO

13041285

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Abstract

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The present invention provides methods for forming a doped Group IBIIIAVIA absorber layer for a solar cell. The method includes forming precursor layers that include a dopant rich layer and then annealing the precursor layers. The annealing process results in dopants diffusing through the layers to an exterior surface. The annealing process is periodically halted to remove dopants from the exposed surface.

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Patent Owner(s)

  • SOLOPOWER SYSTEMS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aksu, Serdar San Jose, US 37 249
Pinarbasi, Mustafa Morgan Hill, US 193 3535

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