Methods of forming a gate structure
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United States of America Patent
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Mar 26, 2013
Grant Date -
Jul 14, 2011
app pub date -
Mar 22, 2011
filing date -
Apr 23, 2008
priority date (Note) -
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Abstract
A gate structure includes an insulation layer on a substrate, a first conductive layer pattern on the insulation layer, a metal ohmic layer pattern on the first conductive layer pattern, a diffusion reduction layer pattern on the metal ohmic layer pattern an amorphous layer pattern on the diffusion reduction layer pattern, and a second conductive layer pattern on the amorphous layer pattern. The gate structure may have a low sheet resistance and desired thermal stability.
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