Memory device and method for sensing and fixing margin cells
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United States of America Patent
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Mar 26, 2013
Grant Date -
Dec 23, 2010
app pub date -
Jun 22, 2009
filing date -
Jun 22, 2009
priority date (Note) -
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Abstract
A programmable resistance memory device with a margin cell detection and refresh resources. Margin cell detection and refresh can include reading a selected cell, measuring a time interval which correlates with resistance of the selected cell during said reading, and enabling a refresh process if the measured time falls within a pre-specified range. The refresh process includes determining a data value stored in the selected cell, using for example a destructive read process, and refreshing the data value in the selected cell. The time interval can be measured by detecting timing within the sensing interval of a transition of voltage or current on a bit line across a threshold.
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