Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers
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United States of America Patent
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Apr 2, 2013
Grant Date -
Aug 12, 2010
app pub date -
Dec 18, 2009
filing date -
Feb 6, 2009
priority date (Note) -
Expired
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Abstract
The present invention provides a method and precursor structure to form a Group IBIIIAIVA solar cell absorber layer. The method includes forming a Group IBIIIAVIA compound layer on a base by forming a precursor layer on the base through electrodepositing three different films, and then reacting the precursor layer with selenium to form the Group IBIIIAVIA compound layer on the base. The three films, described by the precursor layer, include in one embodiment a first alloy film comprising copper, indium and gallium, a second alloy film comprising copper and selenium formed on the first alloy film; and a selenium film formed on the second alloy film.
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