Methods for forming anti-reflection structures for CMOS image sensors
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United States of America Patent
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Apr 2, 2013
Grant Date -
Oct 13, 2011
app pub date -
Jun 21, 2011
filing date -
May 14, 2008
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Abstract
Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
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- INTERNATIONAL BUSINESS MACHINES CORPORATION
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Adkisson, James W | Jericho, US | 164 | 2916 |
Ellis-Monaghan, John J | Grand Isle, US | 254 | 2529 |
Gambino, Jeffrey P | Westford, US | 531 | 7330 |
Musante, Charles F | South Burlington, US | 36 | 319 |
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