Range modulated implants for image sensors
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United States of America Patent
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Apr 2, 2013
Grant Date -
Jan 12, 2012
app pub date -
Jul 6, 2010
filing date -
Jul 6, 2010
priority date (Note) -
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Abstract
Image sensors have photodiodes separated by isolations regions formed from p-well or n-well implants. Isolation regions may be formed that are narrow and deep. Isolation regions may be formed in a multi-step process that selectively places implants at desired depths in a substrate. Complementary photoresist patterns may be used. To form an implant near the surface of a substrate, a photoresist pattern with openings over the desired implant area may be used. Subsequent implantation may use a complementary pattern such that ions pass through photoresist before implanting in desired regions of a substrate.
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