Method of forming an electronic device including forming a charge storage element in a trench of a workpiece
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United States of America Patent
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Apr 2, 2013
Grant Date -
Oct 15, 2009
app pub date -
Apr 14, 2008
filing date -
Apr 14, 2008
priority date (Note) -
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Abstract
A method of forming an electronic device including forming a first trench in a workpiece including a substrate, the first trench having side walls and a bottom surface extending for a width between the side walls and forming a charge-storage layer along the side walls and bottom surface of the first trench. The method further includes implanting ions within the substrate underlying the bottom surface of the first trench to form an implant region and annealing the implant region, wherein after annealing, the implant region extends the width of the bottom surface and along a portion of the side walls.
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