CMOS image sensor
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United States of America Patent
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Apr 2, 2013
Grant Date -
Aug 5, 2010
app pub date -
Apr 8, 2010
filing date -
May 14, 2004
priority date (Note) -
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Abstract
Disclosed is a CMOS image sensor, which can minimize a reflectance of light at an interface between a photodiode and an insulating film, thereby enhancing image sensitivity. Such a CMOS image sensor includes a substrate provided with a photodiode consisting of Si, an insulating film consisting of SiO2 and formed on the substrate, a semi-reflection film interposed between the substrate and the insulating film, and metal interconnections, color filters and micro lenses constituting individual unit pixels. The semi-reflection film has a refraction index value between those of the Si photodiode and the SiO2 insulating film.
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