Photodiode with interfacial charge control and associated process
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United States of America Patent
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Apr 2, 2013
Grant Date -
Nov 18, 2010
app pub date -
May 17, 2010
filing date -
May 18, 2009
priority date (Note) -
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Abstract
A photodiode includes a first doped layer and a second doped layer that share a common face. A deep isolation trench has a face contiguous with the first and second doped layers. A conducting layer is in contact with a free face of the second doped layer. A protective layer is provided at an interface with the first doped layer and second doped layer. This protective layer is capable of generating a layer of negative charge at the interface. The protective layer may further be positioned within the second doped layer to form an intermediate protective structure.
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