Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 2, 2013
Grant Date -
Jun 10, 2010
app pub date -
Dec 3, 2009
filing date -
Dec 7, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully