Structure comprising a getter layer and an adjusting sublayer and fabrication process

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United States of America Patent

PATENT NO 8414963
APP PUB NO 20100178419A1
SERIAL NO

12729634

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Abstract

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The structure comprises at least a device, for example a microelectronic chip, and at least a getter arranged in a cavity under a controlled atmosphere delineated by a substrate and a sealing cover. The getter comprises at least one preferably metallic getter layer, and an adjustment sub-layer made from pure metal, situated between the getter layer and the substrate, on which it is formed. The adjustment sub-layer is designed to modulate the activation temperature of the getter layer. The getter layer comprises two elementary getter layers.

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Patent Owner(s)

  • COMMISSARIAT A L'ENERGIE ATOMIQUE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baillin, Xavier Crolles, FR 41 286

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