Method for forming copper indium gallium chalcogenide layer with shaped gallium profile
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United States of America Patent
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Apr 9, 2013
Grant Date -
Sep 10, 2009
app pub date -
Mar 30, 2009
filing date -
Feb 8, 2008
priority date (Note) -
Expired
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Abstract
Precursor layers and methods of forming Group IBIIIAVIA solar cell absorbers with bandgap grading using such precursor layers are described. The Group IBIIIAVIA absorber includes a top surface with a Ga/(Ga+In) molar ratio in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including Cu, In and Ga formed on a base, a layer of Se formed on the metallic film, and a second metallic layer substantially including Ga formed on the layer of Se.
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