Phase change memory cell having top and bottom sidewall contacts
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United States of America Patent
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Apr 9, 2013
Grant Date -
Dec 17, 2009
app pub date -
Jun 12, 2008
filing date -
Jun 12, 2008
priority date (Note) -
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Abstract
Memory devices and methods for manufacturing are described herein. A memory device as described herein includes a memory element and a first electrode having an inner surface surrounding the memory element to contact the memory element at a first contact surface. The device includes a second electrode spaced away from the first electrode, the second electrode having an inner surface surrounding the memory element to contact the memory element at a second contact surface.
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