Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
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United States of America Patent
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Apr 16, 2013
Grant Date -
Aug 23, 2012
app pub date -
Feb 24, 2012
filing date -
Jun 8, 2010
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Abstract
A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar.
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