Method of manufacturing a light-emitting device
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United States of America Patent
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Apr 16, 2013
Grant Date -
Aug 18, 2011
app pub date -
Apr 25, 2011
filing date -
Aug 20, 2003
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Abstract
To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer.
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