Generation of multiple diameter nanowire field effect transistors
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United States of America Patent
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Apr 16, 2013
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app pub date -
May 12, 2010
filing date -
May 12, 2010
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Abstract
A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming pairs of semiconductor pads connected via respective nanowire channels at each of first and second regions with different initial semiconductor thicknesses and reshaping the nanowire channels into nanowires to each have a respective differing thickness reflective of the different initial semiconductor thicknesses.
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