Method, structure and design structure for customizing history effects of SOI circuits
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United States of America Patent
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Apr 16, 2013
Grant Date -
Oct 1, 2009
app pub date -
Mar 26, 2008
filing date -
Mar 26, 2008
priority date (Note) -
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Abstract
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed over an active region of a FET and a low-leakage dielectric formed on the active region and adjacent the high-leakage dielectric. The low-leakage dielectric has a lower leakage than the high-leakage dielectric. Also provided is a structure and method of fabricating the structure.
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