Dense pitch bulk FinFET process by selective EPI and etch
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United States of America Patent
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Apr 16, 2013
Grant Date -
Aug 25, 2011
app pub date -
May 9, 2011
filing date -
Jun 24, 2005
priority date (Note) -
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Abstract
Disclosed is a method of forming a pair of transistors by epitaxially growing a pair of silicon fins on a silicon germanium fin on a bulk wafer. In one embodiment a gate conductor between the fins is isolated from a conductor layer on the bulk wafer so a front gate may be formed. In another embodiment a gate conductor between the fins contacts a conductor layer on the bulk wafer so a back gate may be formed. In yet another embodiment both of the previous structures are simultaneously formed on the same bulk wafer. The method allow the pairs of transistors to be formed with a variety of features.
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