Semiconducture structure and method of forming the semiconductor structure that provides two individual resistors or a capacitor
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United States of America Patent
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Apr 16, 2013
Grant Date -
Sep 27, 2012
app pub date -
Jun 1, 2012
filing date -
May 28, 2010
priority date (Note) -
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Abstract
A semiconductor structure is formed in the metal interconnect structure of an integrated circuit in a method that provides either two individual resistors that are vertically isolated from each other, or a metal-insulator-metal (MIM) capacitor. As a result, both semiconductor resistors and MIM capacitors can be formed in the same process flow.
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