Semiconductor light emitting device and method for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8421108
APP PUB NO 20120138985A1
SERIAL NO

13208658

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Abstract

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According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hikosaka, Toshiki Kanagawa-ken, JP 109 350
Morioka, Tomoko Kanagawa-ken, JP 4 36
Nunoue, Shinya Chiba-ken, JP 312 3290
Oka, Toshiyuki Kanagawa-ken, JP 64 623
Ono, Hiroshi Kanagawa-ken, JP 369 4172

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