Antimonide-based compound semiconductor with titanium tungsten stack
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United States of America Patent
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Apr 16, 2013
Grant Date -
Oct 23, 2008
app pub date -
Apr 18, 2007
filing date -
Apr 18, 2007
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Abstract
An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
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