High density spin torque three dimensional (3D) memory arrays addressed with microwave current
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United States of America Patent
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Apr 16, 2013
Grant Date -
May 13, 2010
app pub date -
Dec 8, 2009
filing date -
Dec 19, 2006
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Abstract
One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.
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