Method and system for quantitative inline material characterization in semiconductor production processes based on structural measurements and related models
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United States of America Patent
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Apr 16, 2013
Grant Date -
Dec 24, 2009
app pub date -
Apr 3, 2009
filing date -
Jun 20, 2008
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Abstract
By using powerful data analysis techniques, such as PCR, PLS, CLS and the like, in combination with measurement techniques providing structural information, gradually varying material characteristics may be determined during semiconductor fabrication, thereby also enabling the monitoring of complex manufacturing sequences. For instance, the material characteristics of sensitive dielectric materials, such as ULK material, may be detected, for instance with respect to an extension of a damage zone, in order to monitor the quality of metallization systems of sophisticated semiconductor devices. The inline measurement data may be obtained on the basis of infrared spectroscopy, for instance using FTIR and the like, which may even allow directly obtaining the measurement data at process chambers, substantially without affecting the overall process throughput.
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