Non-volatile memory and method with post-write read and adaptive re-write to manage errors

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United States of America Patent

PATENT NO 8423866
APP PUB NO 20110099460A1
SERIAL NO

12642728

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Abstract

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Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. The memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. Input data is written and staged in the first portion before being copied to the second portion. An error management provides checking the quality of the copied data for excessive error bits. The copying and checking are repeated on a different location in the second portion until either a predetermined quality is satisfied or the number or repeats exceeds a predetermined limit. The error management is not started when a memory is new with little or no errors, but started after the memory has aged to a predetermined amount as determined by the number of erase/program cycling its has experienced.

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Patent Owner(s)

Patent OwnerAddress
SANDISK TECHNOLOGIES INC951 SANDISK DRIVE LEGAL DEP MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Avila, Chris Sunnyvale, US 66 1570
Chen, Jian Menlo Park, US 1588 23569
Dusija, Gautam Ashok Milpitas, US 21 723
Gavens, Lee M Milpitas, US 10 637
Huang, Jianmin Sunnyvale, US 170 2933

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