Method of forming photomask by collecting verification data based on a layout of contour patterns
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United States of America Patent
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Apr 16, 2013
Grant Date -
Jan 5, 2012
app pub date -
Jun 24, 2011
filing date -
Jul 2, 2010
priority date (Note) -
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status (Latency Note)
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Abstract
A method of forming a photomask includes providing a layout of design patterns, setting an optical proximity correction (OPC) with respect to the layout of design patterns, and forming a layout of correction patterns with respect to the layout of design patterns by using the set OPC. The method also includes collecting verification data about the layout of correction patterns by using a layout of contour patterns based on the layout of correction patterns, and verifying whether the layout of design patterns and the layout of correction patterns are substantially identical to each other by using the verification data.
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