Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
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United States of America Patent
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Apr 23, 2013
Grant Date -
Jun 10, 2010
app pub date -
Dec 18, 2009
filing date -
May 19, 2008
priority date (Note) -
Expired
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Abstract
The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper, electrodepositing a second layer onto the first layer, the second layer including at least one of a second copper-indium-gallium-ternary alloy film, a copper-indium binary alloy film, a copper-gallium binary alloy film and a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, and electrodepositing a third layer onto the second layer, the third layer including selenium; and reacting the precursor stack to form an absorber layer on the base.
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