Plasma etching method and plasma etching apparatus
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United States of America Patent
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Apr 23, 2013
Grant Date -
May 5, 2011
app pub date -
Feb 5, 2010
filing date -
Nov 5, 2009
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Abstract
In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.
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