Amorphous oxide semiconductor and thin film transistor using the same
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United States of America Patent
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Apr 23, 2013
Grant Date -
May 10, 2012
app pub date -
Jan 18, 2012
filing date -
Aug 28, 2008
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Abstract
There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×1022 cm−3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm−3 or less.
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