Non-volatile semiconductor storage device and method of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8426276
APP PUB NO 20120135595A1
SERIAL NO

13365600

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Abstract

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A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar semiconductor layer via a first air gap and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of first conductive layers contacting the block insulation layer.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONMINATO-KU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aochi, Hideaki Kawasaki, JP 248 12462
Fukuzumi, Yoshiaki Yokohama, JP 352 11739
Katsumata, Ryota Yokohama, JP 210 11711
Kidoh, Masaru Komae, JP 145 10395
Kito, Masaru Yokohama, JP 236 11925
Matsuoka, Yasuyuki Yokohama, JP 54 4886
Tanaka, Hiroyasu Minato-ku, JP 254 11038

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