Method of fabricating semiconductor device
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United States of America Patent
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Apr 23, 2013
Grant Date -
Mar 31, 2011
app pub date -
Sep 30, 2010
filing date -
Sep 30, 2009
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Abstract
An ion implantation is performed to implant ions into a silicon substrate, and a microwave irradiation is performed to irradiate the silicon substrate with microwaves after the ion implantation. After the microwave irradiation, the silicon substrate is transferred to a heat-treatment apparatus, where the silicon substrate is treated with heat by being irradiated with light having a pulse width ranging from 0.1 milliseconds to 100 milliseconds, both inclusive.
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