Method of manufacturing semiconductor device, solid-state imaging device, and solid-state imaging apparatus
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United States of America Patent
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Apr 23, 2013
Grant Date -
Jun 2, 2011
app pub date -
Nov 12, 2010
filing date -
Nov 30, 2009
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Abstract
A method of manufacturing a semiconductor device includes the steps of forming a gate electrode of a transistor on an insulator layer on a surface of a semiconductor substrate, forming an isolation region by performing ion implantation of an impurity of a first conductivity type into the semiconductor substrate, forming a lightly doped drain region by performing, after forming a mask pattern including an opening portion narrower than a width of the gate electrode on an upper layer of the gate electrode of the transistor, ion implantation of an impurity of a second conductivity type near the surface of the semiconductor substrate with the mask pattern as a mask, and forming a source region and a drain region of the transistor by performing ion implantation of an impurity of the second conductivity type into the semiconductor substrate after forming the gate electrode of the transistor.
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