Wafer with spacer including horizontal member
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United States of America Patent
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Apr 23, 2013
Grant Date -
Oct 18, 2012
app pub date -
Sep 14, 2011
filing date -
Apr 14, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In one embodiment, a method of forming an insulating spacer includes providing a base layer, providing an intermediate layer above an upper surface of the base layer, etching a first trench in the intermediate layer, depositing a first insulating material portion within the first trench, depositing a second insulating material portion above an upper surface of the intermediate layer, forming an upper layer above an upper surface of the second insulating material portion, etching a second trench in the upper layer, and depositing a third insulating material portion within the second trench and on the upper surface of the second insulating material portion.
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