Method for isolation formation in manufacturing semiconductor device
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United States of America Patent
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Apr 23, 2013
Grant Date -
Jun 14, 2012
app pub date -
Nov 30, 2011
filing date -
Dec 14, 2010
priority date (Note) -
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Abstract
A method includes forming first insulating films on first and second faces of a substrate, removing the first insulating film on the second face, forming polysilicon films on the first insulating film on the first face and the second face, forming second insulating films on the polysilicon films on the first face and the second face, etching the second insulating film on the first face using a mask including an opening, removing the second insulating films on the first face and the second face, removing the polysilicon film on the side of the first face and forming a passivation film which protects the polysilicon film on the side of the second face so that the polysilicon film on the side of the second face is not removed in the polysilicon film removing step, after the polysilicon film forming step and before the polysilicon film removing step.
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