Composition for etching a metal hard mask material in semiconductor processing
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United States of America Patent
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Apr 23, 2013
Grant Date -
Dec 25, 2008
app pub date -
May 28, 2008
filing date -
Mar 29, 2006
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Abstract
An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. The etching solution is selectively toward etching the metal hard mask material (e.g., Titanium) while suppressing Tungsten, Copper, oxide dielectric material, and carbon doped oxide.
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