Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
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United States of America Patent
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Apr 23, 2013
Grant Date -
Mar 24, 2011
app pub date -
Nov 30, 2010
filing date -
Dec 17, 2004
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Abstract
Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.
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