Semiconductor device and light-emitting device using the same
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United States of America Patent
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Apr 23, 2013
Grant Date -
Aug 23, 2012
app pub date -
Feb 15, 2012
filing date -
Feb 21, 2011
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor layer, a first insulating layer, a gate electrode which is formed on the first insulating layer and has a portion overlapping a channel region of the semiconductor layer with the first insulating layer sandwiched in between, a second insulating layer which is formed on the first insulating layer and covers the gate electrode, and a capacitor electrode which is formed on the second insulating layer and has a portion facing the gate electrode with the second insulating layer sandwiched in between. The second insulating layer has a thin portion, whose thickness is thinner than that of the second insulating layer in surrounding regions, on the portion of the gate electrode overlapping the channel region. A part of the capacitor electrode faces the portion of the gate electrode overlapping the channel region with the thin portion of the second insulating layer sandwiched in between.
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