Compound semiconductor device and method of manufacturing the same

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Apr 23, 2013
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Aug 21, 2008
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Feb 20, 2008
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Feb 20, 2007

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Abstract

A compound semiconductor device has a buffer layer formed on a conductive SiC substrate, an AlxGa1-xN layer formed on the buffer layer in which an impurity for reducing carrier concentration from an unintentionally doped donor impurity is added and in which the Al composition x is 0

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Patent Owner	Address
FUJITSU LIMITED	KAWASAKI

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Imanishi, Kenji	Kawasaki, JP	81	1651
Kikkawa, Toshihide	Kawasaki, JP	100	2353

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Compound semiconductor device and method of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

12034273

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PATENT NO	8426892
APP PUB NO	20080197359A1
SERIAL NO	12034273
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
April 23, 2013	US,8426892,B2 US8426892B2	GRANTED PATENT AS SECOND PUBLICATION
August 21, 2008	US,20080197359,A1 US20080197359A1	FIRST PUBLISHED PATENT APPLICATION

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12034273

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