Sensing device

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United States of America Patent

PATENT NO 8426900
APP PUB NO 20110180856A1
SERIAL NO

13122273

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.

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Patent Owner(s)

Patent OwnerAddress
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE218 GAJEONG-RO YUSEONG-GU DAEJEON 34129 34129

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ah, Chil Seong Daejeon, KR 55 288
Ahn, Chang Geun Daejeon, KR 27 722
Baek, In Bok Cheongju-si, KR 17 242
Kim, An Soon Daejeon, KR 10 64
Kim, Tae Youb Seoul, KR 22 124
Park, Chan Woo Daejeon, KR 169 1207
Sung, Gun Yong Daejeon, KR 61 405
Yang, Jong Heon Daejeon, KR 24 174

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