Penetrating implant for forming a semiconductor device
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United States of America Patent
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Apr 23, 2013
Grant Date -
Sep 8, 2011
app pub date -
May 13, 2011
filing date -
Mar 31, 2008
priority date (Note) -
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Abstract
A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.
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