Importance

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Abstract

A frequency generator is provided which is embodied in an integrated circuit manufactured at a process node below 100 nm. The frequency generator comprises a current starved oscillator configured to generate an output frequency signal in dependence on a voltage of a bias signal and a self-biased current generator configured to generate the bias signal, wherein the self-biased current generator comprises a first transistor and a second transistor connected in series. The bias signal is taken from a midpoint between the first transistor and the second transistor, and respective gates of the first and second transistors are connected to keep said first and second transistors in a cut-off state. Accordingly the self-biased current generator operates in a deep sub-threshold state and a current of said bias signal is dependent on a leakage current in the first and second transistors.

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First Claim