Method of accurately spacing Z-axis electrode
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United States of America Patent
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Apr 30, 2013
Grant Date -
Sep 23, 2010
app pub date -
Mar 19, 2009
filing date -
Mar 19, 2009
priority date (Note) -
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Abstract
A method of forming a device with a controlled electrode gap width includes providing a substrate, forming a functional layer on top of a surface of the substrate, forming a sacrificial layer above the functional layer, exposing a first portion of the functional layer through the sacrificial layer, forming a first spacer layer on the exposed first portion of the functional layer, forming an encapsulation layer above the first spacer layer, and vapor etching the encapsulated first spacer layer to form a first gap between the functional layer and the encapsulation layer.
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