Methods of forming electrically conductive structures

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United States of America Patent

PATENT NO 8431184
APP PUB NO 20110212260A1
SERIAL NO

13103050

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Some embodiments include methods of forming conductive material within high aspect ratio openings and low aspect ratio openings. Initially, the high aspect ratio openings may be filled with a first conductive material while the low aspect ratio openings are only partially filled with the first conductive material. Additional material may then be selectively plated over the first conductive material within the low aspect ratio openings relative to the first conductive material within the high aspect ratio openings. In some embodiments, the additional material may be activation material that only partially fills the low aspect ratio opening, and another conductive material may be subsequently plated onto the activation material to fill the low aspect ratio openings.

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Patent Owner(s)

Patent OwnerAddress
U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT100 WALL STREET SUITE 1600 NEW YORK NY 10005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sinha, Nishant Boise, US 168 2187

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