Methods of providing semiconductor layers from amic acid salts
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United States of America Patent
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Apr 30, 2013
Grant Date -
Dec 1, 2011
app pub date -
May 27, 2010
filing date -
May 27, 2010
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Abstract
A semiconductor layer and device can be provided using a method including thermally converting an aromatic, non-polymeric amic acid salt to a corresponding arylene diimide. The semiconducting thin films can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the salt acts as an internal catalyst.
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