Via formation for cross-point memory
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United States of America Patent
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Apr 30, 2013
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Dec 29, 2009
filing date -
Dec 29, 2009
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Abstract
Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.
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